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Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount - SI1012CR-T1-GE3

Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount - SI1012CR-T1-GE3

£1.29 GBP
£1.29 GBP
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The SI1012CR-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.

Features

  • 1.2V Rated voltage
  • 100% Rg tested
  • 1000V Gate-source ESD protected
  • Halogen-free

Specifications
Transistor Polarity N Channel
Drain Source Voltage Vds 20V
Continuous Drain Current Id 630mA
On Resistance Rds(on) 0.33ohm
Transistor Case Style SC-75A
Transistor Mounting Surface Mount
Rds(on) Test Voltage Vgs 4.5V
Threshold Voltage Vgs 400mV
Power Dissipation Pd 240mW
No. of Pins 3Pins
Operating Temperature Max 150°C
Country of Origin: China

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Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount - SI1012CR-T1-GE3
Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount - SI1012CR-T1-GE3
£1.29/ea		 £0.00
£1.29/ea £0.00