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BD241C STMicroelectronics Transistor, NPN, To-220
BD241C STMicroelectronics Transistor, NPN, To-220
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Product Description
The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Product Features
- Well-controlled hFE parameter for increased reliability
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vcbo = 5V)
Product Details
| Collector Emitter Voltage V(br)ceo: | 100V |
| DC Collector Current: | 5A |
| DC Current Gain hFE: | 25 |
| MSL: | - |
| No. of Pins: | 3 |
| Operating Temperature Max: | 150°C |
| Power Dissipation Pd: | 40W |
| Transistor Case Style: | TO-220 |
| Transistor Polarity: | NPN |
| Transition Frequency ft: | - |
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