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BD911 STMicroelectronics Transistor, NPN, To-220

BD911 STMicroelectronics Transistor, NPN, To-220

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Product Description

The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology.

Product Features
  • Collector to emitter voltage (Vce) is 100V
  • Collector current (Ic) is 15A
  • Power dissipation (Pd) is 90W
  • Collector to emitter saturation voltage of 3V at 10A collector current
  • DC current gain (hFE) of 5 at 10A collector current
  • Operating junction temperature range from 150°C
Product Details
Collector Emitter Voltage V(br)ceo: 100V
DC Collector Current: 15A
DC Current Gain hFE: 50
MSL: -
No. of Pins: 3
Operating Temperature Max: 150°C
Power Dissipation Pd: 90W
Transistor Case Style: TO-220AB
Transistor Polarity: NPN
Transition Frequency ft: 3MHz
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BD911 STMicroelectronics Transistor, NPN, To-220
BD911 STMicroelectronics Transistor, NPN, To-220
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