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Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole - IRFB4115PBF

Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole - IRFB4115PBF

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The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Features

  • Improved gate, avalanche and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • Halogen-free

Specifications
Transistor Polarity N Channel
Drain Source Voltage Vds 150V
Continuous Drain Current Id 104A
On Resistance Rds(on) 0.0093ohm
Transistor Case Style TO-220AB
Transistor Mounting Through Hole
Rds(on) Test Voltage Vgs 20V
Threshold Voltage Vgs 5V
Power Dissipation Pd 380W
No. of Pins 3Pins
Operating Temperature Max 175°C
Country of Origin: Mexico

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Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole - IRFB4115PBF
Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole - IRFB4115PBF
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