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Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole - IRFB4115PBF
Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole - IRFB4115PBF
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The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Features
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Halogen-free
| Specifications | |
|---|---|
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 150V |
| Continuous Drain Current Id | 104A |
| On Resistance Rds(on) | 0.0093ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage Vgs | 20V |
| Threshold Voltage Vgs | 5V |
| Power Dissipation Pd | 380W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Country of Origin: | Mexico |
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