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Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole - STP80NF55-08

Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole - STP80NF55-08

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The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density for low onstate resistance, rugged avalanche characteristics and less critical alignment steps. Applicable at switching applications.

Features

  • Drain to source voltage (Vds) of 55V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) of 80A
  • Power dissipation (Pd) of 300W
  • Low on state resistance of 6.5mohm at Vgs 10V
  • Operating junction temperature range from -55°C to 175°C

Specifications
Transistor Polarity N Channel
Drain Source Voltage Vds 55V
Continuous Drain Current Id 80A
On Resistance Rds(on) 0.008ohm
Transistor Case Style TO-220
Transistor Mounting Through Hole
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 3V
Power Dissipation Pd 300W
No. of Pins 3Pins
Operating Temperature Max 175°C
Country of Origin: Morocco

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Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole - STP80NF55-08
Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole - STP80NF55-08
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